Structural and galvanomagnetic properties of CuInS2 films
Identifieur interne : 000019 ( Main/Exploration ); précédent : 000018; suivant : 000020Structural and galvanomagnetic properties of CuInS2 films
Auteurs : RBID : ISTEX:339_1996_Article_BF01575715.pdfEnglish descriptors
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Abstract
Thin copper-indium-disulphide films were prepared by thermal evaporation technique. X-ray diffraction analysis of the compound used for evaporation showed a tetragonal polycrystalline structure. Differential Thermal Analysis (DTA) of this compound showed two exothermic peaks at 585 and 632 °C. Thin films with thicknesses of 0.14 and 0.27 nm have a deposition rate 10 nm/min, while those with thicknesses of 0.54 and 0.56 nm have a deposition rate 48 nm/min. The obtained films have polycrystalline structure as shown from the electron diffraction study. A growth process was detected in the films by transmission electron microscopy as the film thickness increases. The surface topography was revealed by scanning electron microscopy. The variations of Hall mobility and carrier concentration with magnetic induction were studied. The resistivity-temperature relationship was investigated, from which the activation energies before and after annealing were found to be 0.2, 0.3 and 0.055 eV, respectively.
DOI: 10.1007/BF01575715
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Terra</name><affiliation wicri:level="1"><mods:affiliation>Solid State Physics Department, National Research Centre, Dokki, Cairo, Egypt</mods:affiliation><country xml:lang="fr">Égypte</country><wicri:regionArea>Solid State Physics Department, National Research Centre, Dokki, Cairo</wicri:regionArea><wicri:noRegion>Cairo</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1996_Article_BF01575715.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF01575715</idno><idno type="wicri:Area/Main/Corpus">000A44</idno><idno type="wicri:Area/Main/Curation">000A44</idno><idno type="wicri:Area/Main/Exploration">000019</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>72.15.Gd</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Thin copper-indium-disulphide films were prepared by thermal evaporation technique. X-ray diffraction analysis of the compound used for evaporation showed a tetragonal polycrystalline structure. Differential Thermal Analysis (DTA) of this compound showed two exothermic peaks at 585 and 632 °C. Thin films with thicknesses of 0.14 and 0.27 nm have a deposition rate 10 nm/min, while those with thicknesses of 0.54 and 0.56 nm have a deposition rate 48 nm/min. The obtained films have polycrystalline structure as shown from the electron diffraction study. A growth process was detected in the films by transmission electron microscopy as the film thickness increases. The surface topography was revealed by scanning electron microscopy. The variations of Hall mobility and carrier concentration with magnetic induction were studied. The resistivity-temperature relationship was investigated, from which the activation energies before and after annealing were found to be 0.2, 0.3 and 0.055 eV, respectively.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="b819420b7f0453aea0c24f42a960e9001408d5df"><titleInfo lang="eng"><title>Structural and galvanomagnetic properties of CuInS2 films</title></titleInfo><name type="personal"><namePart type="given">F. S.</namePart><namePart type="family">Terra</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Solid State Physics Department, National Research Centre, Dokki, Cairo, Egypt</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1994-11-03</dateCreated><dateCaptured encoding="w3cdtf">1995-06-09</dateCaptured><dateValid encoding="w3cdtf">2005-04-12</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Thin copper-indium-disulphide films were prepared by thermal evaporation technique. X-ray diffraction analysis of the compound used for evaporation showed a tetragonal polycrystalline structure. Differential Thermal Analysis (DTA) of this compound showed two exothermic peaks at 585 and 632 °C. Thin films with thicknesses of 0.14 and 0.27 nm have a deposition rate 10 nm/min, while those with thicknesses of 0.54 and 0.56 nm have a deposition rate 48 nm/min. The obtained films have polycrystalline structure as shown from the electron diffraction study. A growth process was detected in the films by transmission electron microscopy as the film thickness increases. The surface topography was revealed by scanning electron microscopy. The variations of Hall mobility and carrier concentration with magnetic induction were studied. The resistivity-temperature relationship was investigated, from which the activation energies before and after annealing were found to be 0.2, 0.3 and 0.055 eV, respectively.</abstract><subject lang="eng"><genre>PACS</genre><topic>72.15.Gd</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1996</partNumber><partNumber>Volume: 62</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-02-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 14</identifier><recordInfo><recordOrigin>Springer-Verlag, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF01575715</identifier><identifier type="matrixNumber">Art11</identifier><identifier type="local">BF01575715</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>169</start><end>173</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1996</recordOrigin><recordIdentifier>339_1996_Article_BF01575715.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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